complementary power transistors for isolated package applications designed for generalpurpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. ? electrically similar to the popular mje15030 and mje15031 ? 150 v ceo(sus) ? 8 a rated collector current ? no isolating washers required ? reduced system cost ? high current gainbandwidth product f t = 30 mhz (min) @ i c = 500 madc ? ul recognized, file #e69369, to 3500 v rms isolation on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 3 1 publication order number: mjf15030/d mjf15030 mjf15031 complementary silicon power transistors 8 amperes 150 volts 36 watts npn pnp case 221d02 to220 type 1 2 3 style 2: pin 1. base 2. collector 3. emitter
mjf15030 mjf15031 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? maximum ratings ??????????????????????? ??????????????????????? rating ???? ???? symbol ?????? ?????? value ??? ??? unit ??????????????????????? ??????????????????????? collectoremitter voltage ???? ???? v ceo ?????? ?????? 150 ??? ??? vdc ??????????????????????? ??????????????????????? collectorbase voltage ???? ???? v cb ?????? ?????? 150 ??? ??? vdc ??????????????????????? ??????????????????????? emitterbase voltage ???? ???? v eb ?????? ?????? 5 ??? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? rms isolation voltage (1) test no. 1 per fig. 11 (for 1 sec, r.h. < 30%, test no. 2 per fig. 12 t a = 25 c) test no. 3 per fig. 13 ???? ??? ? ???? v isol ?????? ? ???? ? ?????? 4500 3500 1500 ??? ? ? ? ??? v rms ??????????????????????? ? ????????????????????? ? ??????????????????????? collector current e continuous e peak ???? ??? ? ???? i c ?????? ? ???? ? ?????? 8 16 ??? ? ? ? ??? adc ??????????????????????? ??????????????????????? base current ???? ???? i b ?????? ?????? 2 ??? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? total power dissipation* @ t c = 25 c derate above 25 c ???? ??? ? ???? p d ?????? ? ???? ? ?????? 36 0.29 ??? ? ? ? ??? watts w/ c ??????????????????????? ??????????????????????? total power dissipation @ t a = 25 c derate above 25 c ???? ???? p d ?????? ?????? 2 0.016 ??? ??? watts w/ c ??????????????????????? ??????????????????????? operating and storage junction temperature range ???? ???? t j , t stg ?????? ?????? 65 to +150 ??? ??? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ??????????????????????? ??????????????????????? thermal resistance, junction to ambient ???? ???? r q ja ?????? ?????? 62.5 ??? ??? c/w ??????????????????????? ??????????????????????? thermal resistance, junction to case* ???? ???? r q jc ?????? ?????? 3.5 ??? ??? c/w ??????????????????????? ??????????????????????? lead temperature for soldering purpose ???? ???? t l ?????? ?????? 260 ??? ??? c *measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the devic e mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) proper strike and creepage distance must be provided. ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) ????? ????? v ceo(sus) ??? ??? 150 ???? ???? e ??? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 150 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 10 ??? ??? m adc ?????????????????????? ?????????????????????? collector cutoff current (v cb = 150 vdc, i e = 0) ????? ????? i cbo ??? ??? e ???? ???? 10 ??? ??? m adc ?????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? i ebo ??? e ???? 10 ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.1 adc, v ce = 2 vdc) (i c = 2 adc, v ce = 2 vdc) (i c = 3 adc, v ce = 2 vdc) (i c = 4 adc, v ce = 2 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 40 40 40 20 ???? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ??? e ?????????????????????? ?????????????????????? ????? ????? ?????? ?????? typ ??? ??? ?????????????????????? ?????????????????????? dc current gain linearity ????? ????? h fe ?????? ?????? 2 ??? ??? ?????????????????????? ?????????????????????? c cu e ga ea y (v ce from 2 v to 20 v, i c from 0.1 a to 3 a) (npn to pnp) ????? ????? fe ?????? ?????? 3 ??? ??? ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 1 adc, i b = 0.1 adc) ????? ????? v ce(sat) ??? ??? e ???? ???? 0.5 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 1 adc, v ce = 2 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 1 ??? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gainbandwidth product (2) (i c = 500 madc, v ce = 10 vdc, f test = 10 mhz) ????? ????? f t ??? ??? 30 ???? ???? e ??? ??? mhz notes: 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. f t = ? h fe ?? f test .
mjf15030 mjf15031 http://onsemi.com 3 t, time (ms) 1 0.01 0.3 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.5 10 30 50 100 300 500 1k 3k 5k single pulse r q jc(t) = r(t) r q jc t j(pk) - t c = p (pk) r q jc (t) 15 3 10k 0.5 0.3 0.03 0.1 0.2 20 200 2k 2 figure 1. thermal response i c , collector current (amp) figure 2. forward bias safe operating area 100 m s 5 ms dc 20 3 v ce , collector-emitter voltage (volts) 5 200 5 3 10 2 0.1 0.03 wirebond limit thermal limit secondary breakdown limit @ t c = 25 c 10 30 50 70 1 0.02 100 2720 0.05 0.2 0.3 0.5 150 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 2 and 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjf15030 mjf15031 http://onsemi.com 4 f t , current gain bandwidth product (mhz) c, capacitance (pf) i c , collector current (amp) i c , collector current (amp) 60 f, frequency (mhz) 0 figure 3. reverse bias switching safe operating area figure 4. capacitances 10 v r , reverse voltage (volts) 30 50 100 figure 5. smallsignal current gain figure 6. current gain e bandwidth product 1000 50 500 1.5 c ib (npn) 150 100 200 10 7 90 20 50 100 npn 5 3 30 5 50 10 20 100 0.1 5 10 0.5 2 0.2 1 5 v 8 100 v ce , collector-emitter voltage (volts) 110 5 2 1 130 150 3 0 0 120 140 v be(off) = 9 v i c /i b = 10 t c = 25 c h fe , small-signal current gain v ce = 10 v i c = 0.5 a t c = 25 c 10 0.5 5 10 13 0.7 27 30 20 c ib (pnp) pnp (npn) (pnp) 0 v 1.5 v 3 v c ob (pnp) c ob (npn) 1k 10 1510 0.1 i c , collector current (amp) 2 200 150 500 50 70 100 20 30 0.5 0.2 figure 7a. mjf15030 npn figure 7b. mjf15031 pnp i c , collector current (amp) t j = 150 c h fe , dc current gain t j = 25 c t j = -55 c v ce = 2 v 1k 10 1510 0.1 2 200 500 50 100 20 0.5 0.2 h fe , dc current gain v ce = 2 v t j = 150 c t j = 25 c t j = -55 c dc current gain
mjf15030 mjf15031 http://onsemi.com 5 t, time (s) m t, time (s) m 1 0.2 0.5 10 0.2 0.1 0.5 0.05 0.02 2 0.03 0.01 figure 8a. mjf15030 npn 0.1 1 5 figure 9. turnon times figure 10. turnoff times figure 8b. mjf15031 pnp v be(sat) @ i c /i b = 10 t j = 25 c i c /i b = 10 v cc = 80 v i c /i b = 10 t j = 25 c v be(on) @ v ce = 2 v v ce(sat) @ i c /i b = 20 i c , collector current (amp) 3 0.1 5 0.5 2 10 0.1 5 10 0.5 2 0.2 1 0.2 i c , collector current (amp) 1.2 1.6 0.6 1 0.1 5 10 0.5 2 0.2 1 0.2 i c , collector current (amp) 1.4 0 1.8 0.8 1 0.1 5 10 0.5 2 0.2 1 0.4 t d (npn, pnp) t r (pnp) v cc = 80 v i c /i b = 10, i b1 = i b2 t s (npn) t j = 25 c i c , collector current (amp) v, voltage (volts) v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 20 v be(sat) @ i c /i b = 20 i c /i b = 10 t r (npn) 0.3 1 t f (npn) t f (pnp) t s (pnp) aono voltage
mjf15030 mjf15031 http://onsemi.com 6 mounted fully isolated package leads heatsink 0.110" min figure 11. clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip clip 0.107" min leads heatsink 0.107" min figure 12. clip mounting position for isolation test number 2 figure 13. screw mounting position for isolation test number 3 mounted fully isolated package mounted fully isolated package leads heatsink test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque o f 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a constant pressur e on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not recommend exceeding 10 in . lbs of mount- ing torque under any mounting conditions. figure 14. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf15030 mjf15031 http://onsemi.com 7 package dimensions case 221d02 to220 type issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r
mjf15030 mjf15031 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjf15030/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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